o top i g o back g i wbfbp-03b plastic-encapsulate transistors TSC123JNND03 transistor description npn digital transistor features 1) built-in bias resistors enable the confi guration of an inverter circuit without c onnecting external input resistors (see equivalent circuit) 2) the bias resistors consis t of thin-film resistors with complete isolation to a llow negative biasing of the input.they also have the advantage of almost completely eliminating parasitic effects 3) only the on/off conditions need to be set for operation, making device design easy application npn digital transistor for portable equipment:(i.e. m obile phone,mp3, md,cd-rom, dvd-rom, note book pc, etc.) marking: e42 equivalent circuit o e42 i g absolute maximum ratings(ta=25 ) parameter symbol v alue units supply voltage v cc 50 v input voltage v in -5~12 v i o 100 output current i c(max) 100 ma power dissipation pd 150 mw junction temperature tj 150 storage temperature tstg -55~150 electrical characteristics (ta=25 ) parameter sy m bol min typ max unit c onditions v i(off) 0.5 v cc =5v, i o =100 a input voltage v i(on) 1.1 v v o =0.3v, i o =5 ma output voltage v o(on) 0.1 0.3 v i o /i i =5ma/0.25ma input current i i 3.6 ma v i =5v output current i o(off) 0.5 a v cc =50v, v i =0 dc current gain g i 80 v o =5v, i o =10ma input resistance r 1 1.54 2.2 2.86 k ? - resistance ratio r 2 /r 1 17 21 26 - transition frequency f t 250 mhz v ce =10v, i e =-5ma, f=100mhz wbfbp-03b (1.21.20.5) unit: mm 1. in 2. gnd 3. out 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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